Scope and Limit of Lithography to the End of Moore’s Law, Keynote of the 2012 International Symposium on Physical Design. (66 pages)
Pushing the Limits of Lithography [towards 8 nanometers]
* Pitch splitting with ArF water immersion
* Further wavelength reduction to EUV
* Multiple E-Beam Maskless lithography
Summary of EUVL Concerns
* Need 250 W at IF. Currently less than 10 watt.
* Mask defect and flatness.
* Field-dependent OPC.
* Time-dependence of OPC can be detrimental.
13.5nm light may be reaching physical resolution & DOF limits at 11nm Half Pitch or earlier.
It may reach the economic limit much earlier.
Multiple E-Beam Maskless Lithography
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April 06, 2012
Scope and Limit of Lithography to the End of Moore’s Law
commercialization, double lithography, ebeam lithography, euv lithography, faster than Moore's Law, future, lithography, nanoscale, science, triple lithography