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January 18, 2011

IBM and ARM collaborating to achieve design platform for 14 nanometer chips

IBM and ARM are jointly developing technology which will provide a suite of optimized physical and processor IP by ARM tuned to IBM’s advance manufacturing process down to 14 nanometers (nm); providing streamlined development and earlier introduction of advanced consumer electronics into the marketplace.

EETimes - Japan's Toppan Printing Co. Ltd. has extended a joint development agreement with IBM for a leading-edge photomask process, covering the 14-nm technology node for logic devices. The firms will extend 193-nm immersion lithography for that node.

The 14-nm logic technology node is likely to be the final node capable of being produced with optical lithography alone, and may prove to be an early transition point into EUV development. Future nodes are expected to deploy EUV lithography in order to print features beyond the diffraction limit associated with 193-nm lithography



Past collaboration with IBM and ARM on advanced geometries have been underway since 2008, resulting in the implementation of extensive process and physical IP refinements to improve SoC density, routability, manufacturability, power consumption, and performance. Moreover, through the previous collaboration on the 32nm and 28nm ARM has already delivered eleven test chips that provide concrete research structures and early silicon validation. In addition, ARM has developed specific optimizations targeting ARM processor cores including most recently a complete ARM Cortex-A9 processor core implemented on 32nm High-K Metal Gate technology.

Today’s agreement reinforces the aligned co-development of semiconductor process, foundation Physical IP building blocks, and microprocessor core optimization necessary to achieve market-leading system-on-chip (SoC) solutions. Furthermore, it extend access for ARM to continue this systematic test chip roadmap and assure early time-to-market readiness of the necessary platform of physical and processor IP solutions for nodes ranging from 20nm through 14nm.

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