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November 05, 2010

Fujitsu Develops Gallium-Nitride HEMT Power Amplifier and Extends transmission range by 6x that of existing amplifiers


Fujitsu Limited and Fujitsu Laboratories Ltd. today announced the development of a power amplifier using gallium nitride (GaN) High Electron Mobility Transistors (HEMT) that has achieved the world's highest output performance of 1.3W for wireless communications in the millimeter-wave W-band, for which widespread usage is expected in the future. The new amplifier will offer transmission output equivalent to approximately 16 times that of existing amplifiers that use gallium-arsenide (GaAs), thereby enabling W-band transmission ranges to be extended by approximately six times.

Fujitsu's new GaN HEMT-based power amplifier will make high-capacity wireless communications possible in regions in which it is unfeasible to lay optical fiber cables, in addition to ensuring high-quality communications in rain and under other conditions where the millimeter-wave signal is known to attenuate.



Fujitsu and Fujitsu Laboratories plan to work to further improve the performance and expand the frequency spectrum of the new GaN HEMT power amplifier, while at the same time employing the technology in a wide range of applications, including millimeter-wave-enabled trunk lines and ultra-high-speed wireless network access.


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