November 05, 2010
Fujitsu Develops Gallium-Nitride HEMT Power Amplifier and Extends transmission range by 6x that of existing amplifiers
Fujitsu Limited and Fujitsu Laboratories Ltd. today announced the development of a power amplifier using gallium nitride (GaN) High Electron Mobility Transistors (HEMT) that has achieved the world's highest output performance of 1.3W for wireless communications in the millimeter-wave W-band, for which widespread usage is expected in the future. The new amplifier will offer transmission output equivalent to approximately 16 times that of existing amplifiers that use gallium-arsenide (GaAs), thereby enabling W-band transmission ranges to be extended by approximately six times.
Fujitsu's new GaN HEMT-based power amplifier will make high-capacity wireless communications possible in regions in which it is unfeasible to lay optical fiber cables, in addition to ensuring high-quality communications in rain and under other conditions where the millimeter-wave signal is known to attenuate.
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