Fujitsu Limited and Fujitsu Laboratories Ltd. today announced the development of a power amplifier using gallium nitride (GaN) High Electron Mobility Transistors (HEMT) that has achieved the world's highest output performance of 1.3W for wireless communications in the millimeter-wave W-band, for which widespread usage is expected in the future. The new amplifier will offer transmission output equivalent to approximately 16 times that of existing amplifiers that use gallium-arsenide (GaAs), thereby enabling W-band transmission ranges to be extended by approximately six times.
Fujitsu's new GaN HEMT-based power amplifier will make high-capacity wireless communications possible in regions in which it is unfeasible to lay optical fiber cables, in addition to ensuring high-quality communications in rain and under other conditions where the millimeter-wave signal is known to attenuate.
If you liked this article, please give it a quick review on ycombinator, or Reddit, or StumbleUpon. Thanks
Ocean Floor Gold and Copper
Ocean Floor Mining Company