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October 26, 2010

Elpida, Sharp to ReRAM that is 10,000 times faster than NAND flash memory for 2013

Japan's Elpida Memory Inc and Sharp Corp will co-develop a next-generation memory chip for commercialization in 2013, reported The Nikkei business daily. The ReRAM or resistive random access memory chip consumes less power and is capable of writing data 10,000 times faster than NAND flash memory.

IEEE Spectrum reports that South Korean researchers have recently made a flexible nonvolatile memory based on memristors—fundamental electronic circuit elements discovered in 2008—using thin graphene oxide films Memristors also enable resistive RAM.

Nanoletters - Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications



The Elpida and Sharp ReRAM chip incorporated devices will be able to download a high-definition movie in several seconds and cut power consumption to virtually zero when on standby mode.

The National Institute of Advanced Industrial Science and Technology, the University of Tokyo and other chip equipment makers will join Elpida and Sharp Corp, the world's No. 3 maker of solar cells, in this effort, the business daily added.

Mass production, which will probably be handled by Elpida, the world's No. 3 maker of DRAM chips (dynamic random access memory chips), is expected to begin as early as 2013

The South Korean researchers use a similar design to HP, swapping titanium dioxide for graphene oxide. After depositing 50-micrometer-wide aluminum wires on a 6.5-square-centimeter piece of plastic, they spin a solution containing suspended graphene oxide flakes onto the surface. This forms a thin film of overlapping graphene oxide flakes over which the researchers deposit the top aluminum wire array. This results in 25 memristors, each 50 µm wide.

The graphene oxide devices are 1000 times the size of HP’s memristors, but they’re not intended as ultradense memory but flexible memory

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