Panasonic has developed a high power Gallium Nitride (GaN) transistor for long-distance communication at millimeter-wave frequencies. A 25GHz wireless transceiver was fabricated using the GaN transistor. The device exhibits a maximum output power of 10.7W at 25GHz which theoretically enables communication over 84km.
25 GHz communication would enable multi-gigabit per second data communication (super fast wireless broadband).
The high power GaN transistor, fabricated on a silicon (Si) substrate is suited for mass production and takes advantages of the large diameter achievable with Si
The fabricated transceiver utilizes orthogonal frequency division multiplexing (OFDM) which is suited for high capacity data communication. The averaged output power of 2W out of the 10W from the GaN transistor can achieve 84km communication in theory.
The high power GaN transistor enables communication over far longer distances than those obtained using conventional GaAs transistors.
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