50 nm flash chips for 4 gigabit memory, Nanosys involved to boost memory

Tweet The Intel-Micron Technology joint venture, based in Lehi, Utah, announced July 25 that it has begun sampling 4-gigabit NAND flash memory chips manufactured using a new, 50-nanometer process. The memory capacity is increasing rapidly. It is double the 2005 capacity.

IMFT is already working on some new technology. On June 29, it expanded its collaboration with Nanosys, a Palo Alto, Calif., nanotechnology startup that's designing microscopic nanowires that could be used to boost the capacities of NAND flash memory chips.